Neutron-induced soft error simulator and its accurate predictions

Author

Tosaka, Y. ; Satoh, S. ; Itakura, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

253

Lastpage

256

Abstract

We developed the Neutron Induced Soft Error Simulator (NISES) to clarify the role of cosmic ray neutrons in soft errors (SEs). A recently proposed nuclear reaction theory forms the foundation of the nuclear reaction database of the NISES. NISES accurately reproduces the measured neutron-induced charge collection data in SOI diode test structures and the neutron-induced SER data in sub-half micron CMOS circuits. The need for neutron-induced SE simulator like NISES should increase with the recognition of the importance of cosmic ray neutron-induced SEs.

Keywords

CMOS integrated circuits; VLSI; cosmic ray interactions; neutron effects; semiconductor diodes; silicon-on-insulator; NISES; SOI diode test structures; VLSI; cosmic ray neutrons; exterrestrial radiation effects; neutron-induced SER data; neutron-induced charge collection data; neutron-induced soft errors; nuclear reaction database; nuclear reaction theory; sub-half micron CMOS circuits; Circuit testing; Current measurement; Databases; Equations; Laboratories; Microwave integrated circuits; Neutrons; Predictive models; Protons; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621385

Filename

621385