Title :
Five AlGaAs/GaAs HBT ICs for a 20 Gb/s optical repeater
Author :
Akagi, J. ; Kuriyama, Y. ; Asaka, M. ; Sugiyama, T. ; Iizuka, Norio ; Tsuda, K. ; Obara, M.
Author_Institution :
Mater. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
The development of future ultra high bit rate optical transmission systems is now under way to meet the need for a rapid increase in transmission capacity. The capability of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is already demonstrated by a 10 Gb/s optical transmission unit This paper describes a complete 5-chip set of AlGaAs/GaAs HBT ICs for a 20Gb/s direct detection optical repeater.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; optical communication equipment; repeaters; 20 Gbit/s; AlGaAs-GaAs; AlGaAs/GaAs HBT ICs; AlGaAs/GaAs heterojunction bipolar transistors; capability; optical repeater; optical transmission unit; transmission capacity; ultra high bit rate optical transmission systems; Differential amplifiers; Driver circuits; Gallium arsenide; Heterojunction bipolar transistors; Optical receivers; Preamplifiers; Probes; Radio frequency; Repeaters; Stimulated emission;
Conference_Titel :
Solid-State Circuits Conference, 1994. Digest of Technical Papers. 41st ISSCC., 1994 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-1844-7
DOI :
10.1109/ISSCC.1994.344684
