A computationally efficient technique to extract diffused profiles and three dimensional collector resistances of high energy implanted bipolar devices

Author

Chaudhry, S. ; Chyan, Y.F. ; Carroll, M.S. ; Chen, Abraham Simpson ; Nagy, W.J. ; Lee, J.L. ; Layman, P.A. ; Stevie, F.A. ; Rafferty, C.S. ; Vuong, H.H.

Author_Institution

Bell Labs., Lucent Technol., Orlando, FL, USA

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

257

Lastpage

259

Abstract

A computationally efficient technique to extract the diffused profiles and collector resistances of bipolar transistors formed via high energy implantation in a BiCMOS process is developed. The methodology uses two dimensional process and device simulations to extract three dimensional collector resistances. The bias dependence of the collector resistance is also correctly predicted.

Keywords

BiCMOS integrated circuits; bipolar transistors; doping profiles; electric resistance; electronic engineering computing; ion implantation; semiconductor device models; semiconductor process modelling; 2D process/device simulations; 3D collector resistances; bias dependence; computationally efficient technique; diffused profiles; high energy implanted bipolar devices; three dimensional collector resistances; Area measurement; Computational efficiency; Computational modeling; Contact resistance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electrodes; Implants; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621386

Filename

621386