DocumentCode :
2285340
Title :
Results of the project "Silicon for Mass Unit and Standard" (SIMUS)
Author :
Alasia, F. ; Basile, G. ; D´Agostino, G. ; Peuto, A. ; Pettorruso, S. ; Becker, P. ; Bettin, H. ; Kuetgens, U. ; Stuempe, J. ; Valkiers, S. ; Taylor, P. ; De Bievre, P. ; Jensen, L. ; Servidori, M. ; Spirito, P. ; Zeni, L. ; Amato, G. ; Riemann, H. ; Haer
Author_Institution :
Ist. di Metrologia "G. Colonnetti", CNR, Torino, Italy
fYear :
2002
fDate :
16-21 June 2002
Firstpage :
558
Lastpage :
559
Abstract :
The structural and stoichiometric characterisations of silicon crystals are reported to find the origin of a molar volume discrepancy. The target of reproducing this anomaly was achieved and an hypothesis is proposed.
Keywords :
crystal growth from vapour; crystal structure; crystals; density; elemental semiconductors; impurities; lattice constants; mass measurement; measurement standards; silicon; units (measurement); vacancies (crystal); voids (solid); SIMUS project; Si; Si crystals; crystal growth; growth conditions; impurity determination; lattice constant; molar volume discrepancy; stoichiometric characterisations; structural characterisations; vacancy concentration determination; voids theory; Atmosphere; Atmospheric measurements; Chemical vapor deposition; Crystals; Density measurement; Deuterium; Lattices; Performance evaluation; Semiconductor materials; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on
Conference_Location :
Ottawa, Ontario, Canada
Print_ISBN :
0-7803-7242-5
Type :
conf
DOI :
10.1109/CPEM.2002.1034969
Filename :
1034969
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2285340
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