Modeling the effect of carbon on boron diffusion

Author

Rucker, H. ; Heinemann, B. ; Ropke, W. ; Fischer, G. ; Lippert, G. ; Osten, H.J. ; Kurps, R.

Author_Institution

Inst. for Semicond. Phys., Frankfurt, Germany

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

281

Lastpage

284

Abstract

Transient diffusion of boron in Si and SiGe can be suppressed effectively by carbon incorporation. In this paper we propose a model which is capable of simulating the effect of grown-in substitutional carbon on boron diffusion during thermal annealing and annealing of implantation damage. The model is applied to transient enhanced diffusion (TED) of boron in npn SiGe heterojunction bipolar transistors (HBTs).

Keywords

Ge-Si alloys; annealing; boron; carbon; heterojunction bipolar transistors; ion implantation; semiconductor device models; semiconductor process modelling; silicon; thermal diffusion; B diffusion; C incorporation; Si:B,C; SiGe:B,C; grown-in substitutional C; heterojunction bipolar transistors; implantation damage annealing; model; n-p-n SiGe HBT; thermal annealing; transient diffusion; transient enhanced diffusion; Atomic layer deposition; Boron; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Infrared spectra; Molecular beam epitaxial growth; Semiconductor process modeling; Silicon germanium; Simulated annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621392

Filename

621392