Title :
Modeling the effect of carbon on boron diffusion
Author :
Rucker, H. ; Heinemann, B. ; Ropke, W. ; Fischer, G. ; Lippert, G. ; Osten, H.J. ; Kurps, R.
Author_Institution :
Inst. for Semicond. Phys., Frankfurt, Germany
Abstract :
Transient diffusion of boron in Si and SiGe can be suppressed effectively by carbon incorporation. In this paper we propose a model which is capable of simulating the effect of grown-in substitutional carbon on boron diffusion during thermal annealing and annealing of implantation damage. The model is applied to transient enhanced diffusion (TED) of boron in npn SiGe heterojunction bipolar transistors (HBTs).
Keywords :
Ge-Si alloys; annealing; boron; carbon; heterojunction bipolar transistors; ion implantation; semiconductor device models; semiconductor process modelling; silicon; thermal diffusion; B diffusion; C incorporation; Si:B,C; SiGe:B,C; grown-in substitutional C; heterojunction bipolar transistors; implantation damage annealing; model; n-p-n SiGe HBT; thermal annealing; transient diffusion; transient enhanced diffusion; Atomic layer deposition; Boron; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Infrared spectra; Molecular beam epitaxial growth; Semiconductor process modeling; Silicon germanium; Simulated annealing;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621392
