DocumentCode :
228572
Title :
A low power Built In Self Repair technique for word oriented memories
Author :
Banupriya, C. ; Chandrakala, S.
Author_Institution :
Kalaignar Karunanidhi Inst. of Technol., Coimbatore, India
fYear :
2014
fDate :
13-14 Feb. 2014
Firstpage :
1
Lastpage :
5
Abstract :
In System-On-Chip environment, significant changes in testing methods are to be done for memory arrays. The failures in such memories are expensive due to wastage of large die area. This paper presents a Built-In-Self-Repair Analyzer with optimal repair rate for memory arrays using redundancy. The proposed method requires only a single test even for worst case. The Must-Repair-Analysis (MRA) technique is done on fly during test, it stores faulty addresses and final analysis is done to find a solution to eliminate the analyzed faults. The BIRA module executes an efficient Redundancy Analysis algorithm to generate repair solutions. The proposed infrastructure supports various types of word oriented memories also. Further, power consumption is reduced using a novel low-transition Linear Feedback Shift Register (LFSR). The Dual Speed LFSR (DS-LFSR) consists of two LFSR´s, one is the slow speed LFSR and another is the normal speed LFSR each has independent clock rates. The DS LFSR lowers the transition density at their circuit inputs. Thus it reduces overall switching activity in Memory Under Test and reduces the test power.
Keywords :
built-in self test; integrated circuit reliability; logic design; low-power electronics; memory architecture; linear feedback shift register; low power built in self repair technique; memory arrays; must repair analysis technique; power consumption; redundancy analysis algorithm; word oriented memories; Circuit faults; Clocks; Generators; Redundancy; System-on-chip; BIRA; BISR; BIST; CAM; CRESTA; ESP; FSM; LRM; MRA; RA; SOC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Communication Systems (ICECS), 2014 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-2321-2
Type :
conf
DOI :
10.1109/ECS.2014.6892679
Filename :
6892679
Link To Document :
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