• DocumentCode
    2285793
  • Title

    Low-voltage CMOS device scaling

  • Author

    Chenming Hu

  • Author_Institution
    California Univ., Berkeley, CA, USA
  • fYear
    1994
  • fDate
    16-18 Feb. 1994
  • Firstpage
    86
  • Lastpage
    87
  • Abstract
    Discussions of device scaling are often based on simplistic device models. Much more accurate models have become available recently but remain largely unknown to the circuit and design community. This paper highlights some of these models by projecting low-voltage CMOS device trends.<>
  • Keywords
    insulated gate field effect transistors; semiconductor device models; circuit design; device models; low-voltage CMOS device scaling; Capacitance; Clocks; Delay; Equations; Inverters; MOSFET circuits; SPICE; Semiconductor device modeling; Silicon on insulator technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1994. Digest of Technical Papers. 41st ISSCC., 1994 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-1844-7
  • Type

    conf

  • DOI
    10.1109/ISSCC.1994.344716
  • Filename
    344716
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2285793