Title :
A boundary conforming mesh generation algorithm for simulation of devices with complex geometry
Author :
Moroz, V. ; Motzny, S. ; Lilja, K.
Author_Institution :
Technol. Modeling Assoc., Sunnyvale, CA, USA
Abstract :
An automatic boundary conforming mesh generation algorithm is proposed for device simulation. The algorithm provides meshes with extremely anisotropic elements stretched along the boundaries and gridlines orthogonal to the boundaries and p/n junctions. The meshes created are especially efficient for simulation of MOSFETs with curved channel surfaces.
Keywords :
MOSFET; mesh generation; semiconductor device models; FEM; MOSFET; anisotropic elements; boundary conforming mesh generation algorithm; complex geometry devices; curved channel surfaces; device simulation; Anisotropic magnetoresistance; Conformal mapping; Finite element methods; Geometry; Level set; MOSFETs; Mesh generation; Robustness; Solid modeling; Tensile stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621395
