Title :
Highly-integrated transmitter RFIC with monolithic narrowband tuning for digital cellular handsets
Author :
Negus, K. ; Koupal, B. ; Wholey, J. ; Carter, K. ; Millicker, D. ; Snapp, C. ; Marion, N.
Author_Institution :
Hewlett-Packard Co., Newark, CA, USA
Abstract :
Digital cellular systems are currently replacing older analog systems globally as consumers demand higher quality transmission, lower cost, and better access. Handset manufacturers are reducing the size, weight, cost and power consumption of portable terminals to address larger consumer market segments. The Si bipolar radio-frequency integrated circuit (RFIC) in this work addresses the transmit sections of handsets for the North American Digital Cellular (NADC) system at 824-849 MHz, the Groupe Specialle Mobile (GSM) European system at 890-915 MHz and the Japan Digital Cellular (JDC) system at 940-956 MHz.<>
Keywords :
MMIC; bipolar integrated circuits; cellular radio; digital radio systems; elemental semiconductors; radio transmitters; radiotelephony; silicon; tuning; 824 to 926 MHz; GSM European system; Groupe Specialle Mobile system; ISOSAT; JDC system; Japan Digital Cellular system; NADC system; North American Digital Cellular system; Si; UHF communication; bipolar IC; digital cellular handsets; highly-integrated transmitter RF IC; monolithic narrowband tuning; radiofrequency integrated circuit; transmit section; Band pass filters; CMOS technology; Costs; Energy consumption; Narrowband; Radio frequency; Radio transmitters; Radiofrequency amplifiers; Radiofrequency integrated circuits; Telephone sets;
Conference_Titel :
Solid-State Circuits Conference, 1994. Digest of Technical Papers. 41st ISSCC., 1994 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-1844-7
DOI :
10.1109/ISSCC.1994.344737
