DocumentCode :
2286167
Title :
Temporal Performance Degradation under NBTI: Estimation and Design for Improved Reliability of Nanoscale Circuits
Author :
Paul, Bipul C. ; Kang, Kunhyuk ; Kufluoglu, Haldun ; Alam, Muhammad Ashraful ; Roy, Kaushik
Author_Institution :
Toshiba America Res. Inc., San Jose, CA
Volume :
1
fYear :
2006
fDate :
6-10 March 2006
Firstpage :
1
Lastpage :
6
Abstract :
Negative bias temperature instability (NBTI) has become one of the major causes for temporal reliability degradation of nanoscale circuits. In this paper, we analyze the temporal delay degradation of logic circuits due to NBTI. We show that knowing the threshold voltage degradation of a single transistor due to NBTI, one can predict the performance degradation of a circuit with a reasonable degree of accuracy. We also propose a sizing algorithm taking NBTI-affected performance degradation into account to ensure the reliability of nanoscale circuits for a given period of time. Experimental results on several benchmark circuits show that with an average of 8.7% increase in area one can ensure reliable performance of circuits for 10 years
Keywords :
integrated circuit reliability; logic circuits; logic design; nanoelectronics; 10 years; logic circuits; nanoscale circuit reliability; negative bias temperature instability; temporal performance degradation; temporal reliability degradation; threshold voltage; Analytical models; Degradation; Delay estimation; Digital circuits; MOSFETs; Niobium compounds; Performance analysis; Reliability engineering; Threshold voltage; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation and Test in Europe, 2006. DATE '06. Proceedings
Conference_Location :
Munich
Print_ISBN :
3-9810801-1-4
Type :
conf
DOI :
10.1109/DATE.2006.244119
Filename :
1656995
Link To Document :
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