Silicon germanium heterojunction bipolar technology: the next leap in silicon?

Author

Cressler, J.D. ; Harame, D.L. ; Comfort, J.H. ; Stork, J.M.C. ; Meyerson, B.S. ; Tice, T.E.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

fYear

1994

fDate

16-18 Feb. 1994

Firstpage

24

Lastpage

27

Abstract

SiGe heterostructure bipolar transistor (HBT) technology will allow circuit designers to combine the performance historically associated with compound semiconductor technologies such as GaAs with the integration levels, yield, and cost associated with conventional Si processing. At present, unloaded SiGe ECL circuits switch at sub20ps speeds, transistors exhibit cutoff frequencies in excess of 100GHz, and integration levels high enough to realize a 1.OGHz/1.OW 12b DAC have been achieved. SiGe HBT technology is advancing rapidly, and is nearing the point at which it can be considered a practical device technology.<>

Keywords

Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; 100 GHz; 20 ps; DAC; ECL circuits; SiGe; SiGe HBT technology; circuit design; cost; cutoff frequencies; integration levels; silicon germanium heterojunction bipolar technology; speed; transistors; yield; CMOS technology; Circuits; Costs; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Semiconductor films; Silicon germanium; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1994. Digest of Technical Papers. 41st ISSCC., 1994 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-1844-7

Type

conf

DOI

10.1109/ISSCC.1994.344742

Filename

344742