Title :
Three-dimensional modeling of the TED due to implantation damage
Author :
Jaehee Lee ; Sangho Yoon ; Yountae Kim ; Taeyoung Won ; Jongchoul Kim ; Daehun Lee
Author_Institution :
Sch. of Electr. & Comput. Eng., Inha Univ., Inchon, South Korea
Abstract :
In this paper, we report the three-dimensional simulation result of the transient enhanced diffusion (TED) of dopants in the ion implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in the silicon, the defect distributions after ion implantation was calculated by plus one model, followed by finite element numerical solver for thermal annealing. Our three-dimensional TED simulation could successfully interpret the pile-up phenomena by modifying the diffusion model to the pair-diffusion model. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained.
Keywords :
annealing; diffusion; elemental semiconductors; finite element analysis; ion implantation; semiconductor process modelling; silicon; INPROS; SIMS; Si; TED; defect distribution; dopant distribution; finite element numerical method; ion implantation damage; pair diffusion; pile-up; plus one model; semiconductor process simulation; silicon; thermal annealing; three-dimensional model; transient enhanced diffusion; Boron; CMOS process; Finite element methods; Implants; Ion implantation; Numerical simulation; Semiconductor device modeling; Semiconductor process modeling; Silicon; Simulated annealing;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621397
