3–5 GHz CMOS Power Amplifier design for ultra-wide-band application

Author

Bhale, V.P. ; Shah, A.D. ; Dalal, U.D.

Author_Institution

Dept. of Electron. Eng., Sardar Vallabhbhai Nat. Inst. of Technol., Surat, India

fYear

2014

fDate

13-14 Feb. 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents the design of a wideband class AB cascode Power Amplifier (PA) using UMC 0.18μm CMOS process for UWB applications covering lower band of 3-5 GHz. Designed class AB PA delivers an output power of 1.80267 dBm at an input 1-dB compression point of -11.144 dBm for a 4 GHz frequency. It achieves a good gain flatness of 13.3±1.0 dB over the entire 3-5 GHz. The matching networks are designed to achieve an input and output return loss of <;-7.5 and <;-7.0 dB respectively, with an excellent reverse isolation of <;-37 dB. Power Added Efficiency (PAE) is found to be 15.32% at -5 dBm input RF power. The designed PA also found to be un-conditionally stable.

Keywords

CMOS integrated circuits; microwave power amplifiers; ultra wideband communication; wideband amplifiers; CMOS power amplifier; PAE; UMC CMOS process; UWB applications; class AB PA; frequency 3 GHz to 5 GHz; gain flatness; input return loss; output return loss; power added efficiency; size 0.18 mum; ultra-wide-band application; wideband class AB cascode power amplifier; CMOS integrated circuits; CMOS technology; Impedance matching; Power amplifiers; Power generation; Radio frequency; Transmitters; CMOS; RF; UWB; power added efficiency; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Communication Systems (ICECS), 2014 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4799-2321-2

Type

conf

DOI

10.1109/ECS.2014.6892711

Filename

6892711