A computationally efficient ion implantation damage model and its application to multiple implant simulations

Author

Tian, S. ; Wang, G. ; Morris, M. ; Morris, S. ; Obradovic, B. ; Tasch, A. ; Kennel, H. ; Packan, P. ; Magee, C. ; Sheng, J. ; Lowther, R. ; Linn, J. ; Snell, C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

309

Lastpage

312

Abstract

A computationally efficient ion implantation damage model based on the Kinchin-Pease formula has been developed and implemented into UT-MARLOWE Version 4.0. A speed improvement of up to an order of magnitude over previous damage models has been achieved with an accuracy equal to or better than that of the previous version of UT-MARLOWE. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.

Keywords

ion implantation; semiconductor process modelling; Kinchin-Pease formula; UT-MARLOWE Version 4.0; computational efficiency; ion implantation damage model; multiple implant simulation; Boron; Computational modeling; Hot carrier effects; Hot carriers; Implants; Impurities; Ion implantation; Microelectronics; Predictive models; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621399

Filename

621399