Title :
A computationally efficient ion implantation damage model and its application to multiple implant simulations
Author :
Tian, S. ; Wang, G. ; Morris, M. ; Morris, S. ; Obradovic, B. ; Tasch, A. ; Kennel, H. ; Packan, P. ; Magee, C. ; Sheng, J. ; Lowther, R. ; Linn, J. ; Snell, C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A computationally efficient ion implantation damage model based on the Kinchin-Pease formula has been developed and implemented into UT-MARLOWE Version 4.0. A speed improvement of up to an order of magnitude over previous damage models has been achieved with an accuracy equal to or better than that of the previous version of UT-MARLOWE. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.
Keywords :
ion implantation; semiconductor process modelling; Kinchin-Pease formula; UT-MARLOWE Version 4.0; computational efficiency; ion implantation damage model; multiple implant simulation; Boron; Computational modeling; Hot carrier effects; Hot carriers; Implants; Impurities; Ion implantation; Microelectronics; Predictive models; Radiative recombination;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621399
