Title :
A finite-element approach to the development of a general purpose microelectronic device simulator
Author :
Sung, Changling ; Ho, Fat Duen
Author_Institution :
Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA
Abstract :
Using finite element methods a general purpose two-dimensional microelectronic device simulator is developed. The Newton method is used to linearize the semiconductor equations, which are solved simultaneously by a sparse matrix solver. This simulator can do the modeling for MOSFETs, BJTs, EEPROM transistors, and some other microelectronic devices
Keywords :
EPROM; MOSFET; Newton method; bipolar transistors; electronic engineering computing; finite element analysis; semiconductor device models; sparse matrices; BJT; EEPROM transistors; MOSFET; Newton´s method; finite-element approach; general purpose microelectronic device simulator; semiconductor equations; sparse matrix solver; Charge carrier processes; Circuit simulation; EPROM; Electrons; Finite element methods; Jacobian matrices; MOSFETs; Microelectronics; Poisson equations; Sparse matrices;
Conference_Titel :
Southeastcon '95. Visualize the Future., Proceedings., IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
0-7803-2642-3
DOI :
10.1109/SECON.1995.513064
