DocumentCode
2286794
Title
A finite-element approach to the development of a general purpose microelectronic device simulator
Author
Sung, Changling ; Ho, Fat Duen
Author_Institution
Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA
fYear
1995
fDate
26-29 Mar 1995
Firstpage
96
Lastpage
98
Abstract
Using finite element methods a general purpose two-dimensional microelectronic device simulator is developed. The Newton method is used to linearize the semiconductor equations, which are solved simultaneously by a sparse matrix solver. This simulator can do the modeling for MOSFETs, BJTs, EEPROM transistors, and some other microelectronic devices
Keywords
EPROM; MOSFET; Newton method; bipolar transistors; electronic engineering computing; finite element analysis; semiconductor device models; sparse matrices; BJT; EEPROM transistors; MOSFET; Newton´s method; finite-element approach; general purpose microelectronic device simulator; semiconductor equations; sparse matrix solver; Charge carrier processes; Circuit simulation; EPROM; Electrons; Finite element methods; Jacobian matrices; MOSFETs; Microelectronics; Poisson equations; Sparse matrices;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '95. Visualize the Future., Proceedings., IEEE
Conference_Location
Raleigh, NC
Print_ISBN
0-7803-2642-3
Type
conf
DOI
10.1109/SECON.1995.513064
Filename
513064
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