Simulations for the dynamic response of single-transit SiC IMPATTs

Author

Joshi, R.P. ; Pathak, S.

Author_Institution

Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA

fYear

1995

fDate

26-29 Mar 1995

Firstpage

102

Lastpage

105

Abstract

We present simulation results for the dynamic characteristics of single-transit SiC IMPATT devices. An iterative Monte Carlo-Crank-Nicholson technique has been used to solve the coupled electron transport-heat conduction problem. Our results show that the internal power generation profile within the SiC IMPATT device can be very non-uniform. The internal heating is seen to degrade device efficiency, operating frequency, reduce the output current, and increase the transit time

Keywords

IMPATT diodes; Monte Carlo methods; dynamic response; heat conduction; iterative methods; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; coupled electron transport-heat conduction problem; device efficiency; dynamic characteristics; dynamic response; internal heating; internal power generation profile; iterative Monte Carlo-Crank-Nicholson technique; operating frequency; output current; simulations; single-transit SiC IMPATT diode; transit time; Computational modeling; Computer simulation; Electromagnetic heating; Electrons; Frequency; Microwave devices; Silicon carbide; Temperature; Thermal conductivity; Thermal management of electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '95. Visualize the Future., Proceedings., IEEE

Conference_Location

Raleigh, NC

Print_ISBN

0-7803-2642-3

Type

conf

DOI

10.1109/SECON.1995.513066

Filename

513066