• DocumentCode
    2286875
  • Title

    Circuit-aware Device Design Methodology for Nanometer Technologies: A Case Study for Low Power SRAM Design

  • Author

    Chen, Qikai ; Mukhopadhyay, Saibal ; Bansal, Aditya ; Roy, Kaushik

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
  • Volume
    1
  • fYear
    2006
  • fDate
    6-10 March 2006
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In this paper, we propose a general circuit-aware device design methodology, which can improve the overall circuit design by taking advantages of the individual circuit characters during the device design phase. The proposed methodology analytically derives the optimal device in terms of the pre-specified circuit quality factor. We applied the proposed methodology to SRAM design and achieved significant reduction in standby leakage and access time (11% and 7%, respectively, for conventional 6T-SRAM). Also, we observed that the optimal devices selected depend considerably on the applied circuit techniques. We believe that the proposed circuit-aware device design methodology will be useful in the sub-90 nm technology, where different leakage components (sub threshold, gate, and junction tunneling) are comparable in magnitude. Also, in this work, we have presented a design automation framework for SRAM, which is conventional custom designed and optimized
  • Keywords
    SRAM chips; integrated circuit design; logic design; low-power electronics; nanoelectronics; tunnelling; 90 nm; circuit-aware device design; design automation framework; gate tunneling; junction tunneling; low power SRAM design; nanometer technologies; quality factor; sub threshold tunneling; CMOS technology; Circuit synthesis; Computer aided software engineering; Design methodology; Design optimization; Geometry; Leakage current; Nanoscale devices; Random access memory; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation and Test in Europe, 2006. DATE '06. Proceedings
  • Conference_Location
    Munich
  • Print_ISBN
    3-9810801-1-4
  • Type

    conf

  • DOI
    10.1109/DATE.2006.243868
  • Filename
    1657034