Title :
Nanowire zero-capacitor DRAM transistors with and without junctions
Author :
Lee, Chi-Woo ; Yan, Ran ; Ferain, Isabelle ; Kranti, Abhinav ; Akhvan, N.D. ; Razavi, Pedram ; Yu, Ran ; Colinge, J.P.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
This paper shows the applicability of the JunctionsLess (JL) Multiple-Gate MOSFET (MuGFET) structure to capacitor-less one-transistor dynamic random access memory (1T-DRAM) applications and compares it with the more conventional inversion-mode (IM) MuGFET. The JL-MuGFET has advantages over the IM MuGFETs for 1T-DRAM in that it has a very low leakage current and a low avalanche breakdown voltage due to the lack of junctions in the structure.
Keywords :
DRAM chips; MOSFET; avalanche breakdown; leakage currents; nanowires; IT-DRAM; MuGFET; avalanche breakdown voltage; capacitor-less one-transistor dynamic random access memory; junctions-less multiple-gate MOSFET structure; leakage current; nanowire zero-capacitor DRAM transistors;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2010.5697888
