DocumentCode :
2286920
Title :
Integrated statistical process and device simulation system with automatic calibration using single-step feedback and backpropagation neural network
Author :
Chen, V.M.C. ; Yung-Tao Lin ; Yeng-Kaung Peng
Author_Institution :
Submicron Dev. Center, Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear :
1997
fDate :
8-10 Sept. 1997
Firstpage :
313
Lastpage :
314
Abstract :
An integrated simulation system that combines process and device simulation is developed in Submicron Development Center of AMD to address the following issues: 1. The manufacturing data are fundamentally statistical. It is difficult to measure exact values for each parameter in every process step, and single data point is simply insufficient to justify any decision. 2. A high order of data accuracy is required for fine-tuning an established fabrication process. 3. A high degree of flexibility and out-of-spec prediction ability is required for process development. 4. Fast ramp-up time for process control demands minimum engineering calibration effort. 5. Development engineers need full flexibility to modify process flow, process parameter, as well as underlying device physics models. These require a combination of statistical approach, device physics modeling and a series of data processing techniques.
Keywords :
backpropagation; calibration; integrated circuit manufacture; neural nets; semiconductor process modelling; statistical process control; AMD; automatic calibration; backpropagation neural network; data accuracy; data processing techniques; device physics modeling; device physics models; device simulation system; engineering calibration effort; manufacturing data; out-of-spec prediction ability; process control; process development; process flow; process parameter; ramp-up time; single-step feedback; statistical process simulation; Backpropagation; Calibration; Electric variables measurement; Fabrication; Manufacturing; Neural networks; Neurofeedback; Physics; Process control; Statistical distributions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
Type :
conf
DOI :
10.1109/SISPAD.1997.621400
Filename :
621400
Link To Document :
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