DocumentCode
2286981
Title
Annealing effect on contact characteristics in TiN based 3-terminal NEM relays
Author
Lee, Jeong-Oen ; Kim, Min-Wu ; Ko, Seung-Deok ; Yoon, Jun-Bo
Author_Institution
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
fYear
2010
fDate
17-20 Aug. 2010
Firstpage
258
Lastpage
261
Abstract
Thermal annealing process has been accommodated to improve contact characteristics in TiN based NEM relays. The annealing process was performed after TiN electrode formation and before HF release. As a result, abrupt I-V characteristic and current stability have been attained. In cyclic test, the device with thermal treatment showed slow contact degradation. These results suggest that the thermal annealing is effective for improving the device performance and for obtaining a reliable operation in TiN based NEM relays.
Keywords
CMOS integrated circuits; annealing; nanoelectromechanical devices; semiconductor relays; titanium compounds; 3-terminal NEM relays; CMOS process; I-V characteristics; TiN; contact characteristics; current stability; nanoelectromechanical relays; thermal annealing; thermal treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location
Seoul
ISSN
1944-9399
Print_ISBN
978-1-4244-7033-4
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2010.5697893
Filename
5697893
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