Title :
An inclusive study on characteristics of junctionless transistor
Author :
Prashanth Kumar, B. ; Arif, Wasim ; Baishya, Srimanta
Author_Institution :
Nat. Inst. of Technol. Silchar, Silchar, India
Abstract :
Junctionless transistor is a new type of device without any PN or N+N or P+P junction. These transistors are highly scalable. A clear study on the characteristics of junctionless FET compared with all single gate, double gate, triple gate and gate all around (GAA) transistors which are uniformly doped with different structures and body thickness. The I-V Characteristics which fluctuates with change in channel length and body thickness are analysed and investigated for n-type with the help of extensive device simulations for silicon substrate material. It also describes issues in ultra-small devices, such as doping fluctuation effects.
Keywords :
field effect transistors; semiconductor device models; semiconductor doping; I-V characteristics; Si; body thickness; channel length; doping fluctuation effects; extensive device simulations; junctionless FET; junctionless transistor; silicon substrate material; ultra-small devices; uniform doping; Doping; Logic gates; Performance evaluation; Silicon; Threshold voltage; Transistors; Tunneling; Junctionless FET; band to band tunnelling (BTBT); gate all around; multi-gate transistor; short channel effects (SCE); single gate;
Conference_Titel :
Electronics and Communication Systems (ICECS), 2014 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-2321-2
DOI :
10.1109/ECS.2014.6892746
