Title :
A numerical model for BJTs from liquid-nitrogen temperature to room temperature
Author :
Tseng, Fan Jon ; Ho, Fat Duen
Author_Institution :
Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA
Abstract :
It has previously been reported that the Boltzmann statistics approximation as applied to MOSFETs at low-temperature yields a result very close to that of the approach following Fermi-Dirac statistics. However, by using the Boltzmann statistics approximation, results are obtained in less CPU-time than using Fermi-Dirac statistics. The present paper presents a simulation program for modeling the behavior of a bipolar junction transistor (BJT) operating under temperatures ranging from room temperature (300°K) down to liquid nitrogen temperature (77°K). Numerical methods for the simulation are outlined. The Boltzmann statistics approximation is applied in most of the cases. The simulation results of Boltzmann statistics are illustrated along with the case that assuming 100% ionization
Keywords :
bipolar transistors; carrier density; carrier mobility; cryogenic electronics; energy gap; mesh generation; semiconductor device models; statistical analysis; 77 to 300 K; BJT; Boltzmann statistics approximation; bipolar junction transistor; carrier concentration; energy band gap; ionization; liquid-N2 temperature; low-temperature; room temperature; Charge carrier processes; Computational modeling; Finite difference methods; Ionization; MOSFETs; Nitrogen; Numerical models; Poisson equations; Statistics; Temperature distribution;
Conference_Titel :
Southeastcon '95. Visualize the Future., Proceedings., IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
0-7803-2642-3
DOI :
10.1109/SECON.1995.513098
