Grid size independent model of inversion layer carrier mobility

The universality of effective carrier mobility in MOSFET inversion layers has been reported. In order to realize the accurate device simulation of MOSFETs, a mobility model considering the universality is indispensable. A local field model (LFM) has been proposed. The LFM proposed was derived from the requirement that the calculated conductance of a whole inversion layer gave the measured value. However, the resulting conductance varies with the grid size strongly. The authors intend to solve this inconsistency, to examine this grid size dependency and propose a new grid size independent LFM.