DocumentCode :
2287391
Title :
A compact ultrafast capillary discharge for EUV projection lithography
Author :
Choi, P. ; Krisch, I. ; Larour, J. ; Dumitrescu, C. ; Favre, M. ; Chuvatin, A. ; Rous, J. ; Leblanc, C. ; Guilbert, A.
Author_Institution :
Lab. de Phys. des Milieux Ionises, Ecole Polytech., Palaiseau, France
fYear :
2000
fDate :
2000
Firstpage :
42461
Lastpage :
42465
Abstract :
Extreme ultra-violet lithography (EUVL) is expected to play an important role in the next generation of lithography system for the production of sub-100 nm feature microelectronic devices. An efficient source of EUV radiation in the 10-15 nm region has to be developed to comply with the demands for practical application. In this paper, the authors report on the development of a novel ultrafast hollow cathode triggered capillary discharge fitting with the desirable EUV region by operating in Xenon at low pressure. After being triggered by means of the hollow cathode effect ,the discharge starts on-axis. The resulting plasma channel is then heated up using a stored energy of less than 0.2 J before attaining the maximum temperature of 30 eV within a nanosecond timescale. During a pulse length of 5 ns concerning the EUV emission, the transient plasma inside the capillary whose aspect ratio is much more than 10 emits mainly between 10 and 20 nm, with a source size of less than 200 μm in diameter. The spectrum consists of Xe VII to Xe X line radiation. This very high energy efficiency allows practical scaling of the device to operate in the multi-kHz regime
Keywords :
pulsed power supplies; 10 to 15 nm; 10 to 20 nm; 30 eV; 5 ns; EUV projection lithography; EUV radiation source; aspect ratio; compact ultrafast capillary discharge; energy efficiency; extreme ultra-violet lithography; hollow cathode trigger; microelectronic devices; plasma channel; pulse length; pulsed power supply; source size; transient plasma;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Pulsed Power 2000 (Digest No. 2000/053), IEE Symposium
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:20000273
Filename :
859550
Link To Document :
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