Title :
Resonant tunneling with superlattice emitters
Author :
Banoo, Kausar ; Daniels-Race, Theda
Author_Institution :
Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
Abstract :
In this study we examine the effect of superlattice (SL) structures as electron injectors to asymmetric double barrier resonant tunneling diodes (ADBRTDs). The experiment consisted of growing devices with five periods of GaAs/AlAs SLs prior to the ADBRT structure in the growth direction. The periods of SL used in our characterization were 50 Å/50 Å, 30 Å/30 Å and 15 Å/ 15 Å. Observations of the effect of the SL period on the first resonance level in forward bias and reverse bias were made. Phonon assisted tunneling was also observed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; phonons; resonant tunnelling diodes; semiconductor superlattices; 15 angstrom; 30 angstrom; 50 angstrom; GaAs-AlAs; asymmetric double barrier resonant tunneling diodes; characterization; electron injectors; first resonance level; forward bias; growth direction; phonon assisted tunneling; resonant tunneling; reverse bias; superlattice emitters; Electrons; Gallium arsenide; Heterojunctions; Laser sintering; Neodymium; Phonons; Resonance; Resonant tunneling devices; Semiconductor diodes; Superlattices;
Conference_Titel :
Southeastcon '95. Visualize the Future., Proceedings., IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
0-7803-2642-3
DOI :
10.1109/SECON.1995.513099
