• DocumentCode
    2287642
  • Title

    The application of pressure contact IGBTs in pulse power

  • Author

    Wakeman, F. ; Findlay, W.

  • Author_Institution
    Westcode Semicond. Ltd., Chippenham, UK
  • fYear
    2000
  • fDate
    2000
  • Abstract
    The pressure contact IGBT is introduced as a suitable switch for pulse power applications. A comparison is made betwen the electromechanical characteristics of the pressure contact IGBT and a similarly rated substrate mounted device. Some significant differences, which may offer an advantage in some pulse power applications, are identified. Initial test results, under short pulse high di/dt conditions, are presented and some conclusions drawn as to the future expansion of these results to encompass additional pulse power operating conditions
  • Keywords
    insulated gate bipolar transistors; electromechanical characteristics; pressure contact IGBT; pulse power operating conditions; pulse power switch; short pulse high di/dt conditions; substrate mounted device;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Pulsed Power 2000 (Digest No. 2000/053), IEE Symposium
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:20000289
  • Filename
    859566