DocumentCode
2287717
Title
Well-defined plateaus of the conductance in two-terminal device of nonsuspended graphene
Author
Kang, Haeyoung ; Kim, Kanghyun ; Woo, Byung-Chill ; Yun, Wan Soo
Author_Institution
Korea Res. Inst. of Stand. & Sci., Daejeon, South Korea
fYear
2010
fDate
17-20 Aug. 2010
Firstpage
679
Lastpage
682
Abstract
Quantized conductance, reflecting the half-integer quantum Hall effect in a non-suspended single-layer graphene, was clearly observed in a two-terminal device at 2 K and 8 T, particularly at ±2e2/h and ±6e2/h. Dependence of the conductance quantization upon temperature and the magnetic field strength was systematically investigated. In the case of v = +2, the quantized behavior was discernable even at 180 K. Resistance of Dirac point decreased linearly with decrease of temperature and increases below 20 K, implying the behavior of quantum Hall insulator at high magnetic field.
Keywords
electrical conductivity; electrical resistivity; graphene; quantum Hall effect; C; Dirac point; half-integer quantum Hall effect; magnetic field strength; magnetic flux density 8 T; nonsuspended single-layer graphene; quantized conductance; quantum Hall insulator; resistance; temperature 2 K; two-terminal device;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location
Seoul
ISSN
1944-9399
Print_ISBN
978-1-4244-7033-4
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2010.5697932
Filename
5697932
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