DocumentCode
2288452
Title
Assessment of accuracy limitations of full band Monte Carlo device simulation
Author
Venturi, F. ; Ghetti, A.
Author_Institution
Dept. de Ingegneria dell´Inf., Parma Univ., Italy
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
343
Lastpage
346
Abstract
In this paper we investigate some of the numerical approximations involved in the development of Full Band Monte Carlo (FBMC) programs for semiconductor (silicon) devices. In particular, we focus on how the accuracy in describing the Full Band silicon structure affects quantities such as the density of states (DoS), scattering rates, velocity field curves, etc.
Keywords
Monte Carlo methods; band structure; electronic density of states; elemental semiconductors; semiconductor device models; silicon; Si; band structure; density of states; full band Monte Carlo simulation; numerical approximation; scattering rate; semiconductor device; silicon; velocity field curve; Analytical models; Conductors; Electrons; Interpolation; Monte Carlo methods; Scattering; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621408
Filename
621408
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