Title :
Investigation of sensitivity and pulse characteristics of detectors based on GaAs, compensated with chromium, exposed to X-ray
Author :
Garaev, R.R. ; Tyazhev, A.V. ; Tolbanov, O.P. ; Zarubin, A.N. ; Mokeev, D.Y.
Author_Institution :
Nat. Res. Tomsk State Univ., Tomsk, Russia
Abstract :
This paper presents the results of experimental investigations of sensitivity and pulse characteristics of detectors based on gallium arsenide compensated with chromium exposure to X-ray band 60-120 keV. A comparison of the sensitivity of detectors based on different materials has been made.
Keywords :
X-ray detection; chromium; gallium arsenide; semiconductor counters; sensitivity; GaAs-Cr; X-ray band; detector pulse characteristics; detector sensitivity; electron volt energy 60 keV to 120 keV; gallium arsenide; Detectors; Epitaxial growth; Gallium arsenide; Photoconductivity; Sensitivity; Silicon; GaAs; X-ray; detector; sensitivity;
Conference_Titel :
Control and Communications (SIBCON), 2011 International Siberian Conference on
Conference_Location :
Krasnoyarsk
Print_ISBN :
978-1-4577-1069-8
DOI :
10.1109/SIBCON.2011.6074982
