• DocumentCode
    2288645
  • Title

    2-dimensional simulation of FN current suppression including phonon assisted tunneling model in silicon dioxide

  • Author

    Eikyu, K. ; Sakakibara, K. ; Ishikawa, K. ; Nishimura, T.

  • Author_Institution
    ULSI Dev. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
  • fYear
    1997
  • fDate
    8-10 Sept. 1997
  • Firstpage
    347
  • Lastpage
    350
  • Abstract
    Two-dimensional effect of trapped electrons on device characteristics are calculated using a two-dimensional device simulator including a trap-filling current model. As the result of simulation, FN current is suppressed when the neutral trap density is over 10/sup 19/ cm/sup -3/. The results correspond to the endurance characteristics of flash memories.
  • Keywords
    MOSFET; electron traps; phonons; semiconductor device models; silicon compounds; tunnelling; Fowler-Nordheim current suppression; MOSFET gate oxide; SiO/sub 2/; electron trap filling; flash memory device; neutral trap density; phonon assisted tunneling model; silicon dioxide; two-dimensional simulation; Electron emission; Electron traps; Electronic mail; MOSFETs; Phonons; Probability; Silicon compounds; Tunneling; Ultra large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
  • Conference_Location
    Cambridge, MA, USA
  • Print_ISBN
    0-7803-3775-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.1997.621409
  • Filename
    621409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2288645