Aqueous synthesis of n-/p-type ZnO nanorods on porous silicon for the application of p-n junction device

Zinc oxide (ZnO) nanorods have shown very unique properties for applications such as field emission (FE), light emitting diode (LED), transparent film of solar cell. In general, as-synthesized ZnO nanorods have n-type semiconducting properties. Many researchers have tried to grow p-type ZnO naorods for making p-n junction device. The construction of p-n junction device using ZnO nanorods is limited by producing p-type ZnO nanorods. In this work, chemical bath deposition (CBD) is used to synthesize ZnO nanorods, Before CBD a seed layer is produced by atomic layer deposition (ALD) on n-type porous silicon (PS) To fabricate p-type ZnO nanorods, nitrogen (N) from NH₃ is used as doping material during seeding process. The ZnO nanorods are aligned vertically with uniform shape and length on the PS substrate. This approach opens the possibility of creating standard p-n junction device for applications as sensor arrays, piezoelectric antenna arrays, optoelectronic devices, and interconnects.