DocumentCode :
2289647
Title :
Towards robust design of hybrid CMOS-SETs using feedback architectures
Author :
Deng, Guoqing ; Chen, Chunhong
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
fYear :
2010
fDate :
17-20 Aug. 2010
Firstpage :
1125
Lastpage :
1129
Abstract :
Low temperature operation and background charge fluctuation are among critical limitations for practical single-electron-tunneling (or SET) based circuits. Particularly, background charges on the island of SET devices affect the phase of Coulomb blockade oscillation, and may eventually lead to incorrect circuit operation. In order to construct robust SET circuits, we explore new design methods based on feedback architectures and novel characteristics of SET devices. We first discuss the impact of a direct feedback on circuit performance against background charges. Then, we propose a self-adapted input-referred feedback structure which can drastically reduce the sensitivity of circuit behaviors to background charge fluctuations. An improved hybrid CMOS-SET ADC circuit is also presented as an example to take advantage of the proposed feedback architecture for robustness against random background charges.
Keywords :
CMOS integrated circuits; Coulomb blockade; analogue-digital conversion; feedback; integrated circuit design; single electron devices; tunnelling; Coulomb blockade oscillation; charge fluctuation; feedback architectures; hybrid CMOS-SET; low temperature operation; self-adapted input-referred feedback structure; single-electron-tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
ISSN :
1944-9399
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2010.5698032
Filename :
5698032
Link To Document :
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