A high-gain fully-differential thermal noise-canceling CMOS front-end amplifier

Author

Chimpleekul, Puttachai ; Kasemsuwan, Varakorn

Author_Institution

Sch. of Electron. Eng., King Mongkut´´s Inst. of Technol. Ladkrabang (KMITL), Bangkok, Thailand

fYear

2011

fDate

6-7 Oct. 2011

Firstpage

90

Lastpage

93

Abstract

This paper presents a fully-differential CMOS front-end amplifier using g_m-boosting and noise-canceling techniques. The proposed front-end amplifier is designed based on a 0.18 μm standard CMOS process and 2 V supply. Simulation results show noise figure (NF) of 2.9 dB, while the voltage gain and bandwidth of the amplifier are 31.6 dB and 2 GHz, respectively. The power dissipation is 19 mW.

Keywords

CMOS analogue integrated circuits; differential amplifiers; thermal noise; NF; bandwidth; bandwidth 2 GHz; fully-differential CMOS front-end amplifier; gain 31.6 dB; gm-boosting techniques; high-gain fully-differential thermal noise-canceling; noise figure; noise figure 2.9 dB; noise-canceling techniques; power 19 mW; power dissipation; size 0.18 mum; standard CMOS process; voltage 2 V; voltage gain; CMOS integrated circuits; Gain; Noise; Noise measurement; Thermal noise; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electronics (PrimeAsia), 2011 Asia Pacific Conference on Postgraduate Research in

Conference_Location

Macau

ISSN

2159-2144

Print_ISBN

978-1-4577-1608-9

Type

conf

DOI

10.1109/PrimeAsia.2011.6075078

Filename

6075078