Title :
A 0.13-μm CMOS 0.8–10.6GHz low noise amplifier with active balun for multi-standard applications
Author :
Zhang, Kaichen ; Li, Wei ; Ye, Fan ; Li, Ning ; Ren, Junyan
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
A CMOS 0.8-10.6 GHz Low Noise Amplifier (LNA) with an active balun is proposed for multi-standard applications. A resistive negative feedback stage is adopted for wideband input impedance matching and an active balun is proposed to realize single-to-differential (S2D) conversion. This LNA was designed in a 0.13-μm RF CMOS process with an active area of 0.33 mm2. The post simulation results show that the balun-LNA achieves a minimum NF of 2.8 dB, S11 less than -10 dB, a maximum gain of 16.3 dB and a maximum IIP3 of -3.2 dBm with a power consumption of 13.7 mW from 1.2-V supply.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; baluns; feedback amplifiers; field effect MMIC; impedance matching; low noise amplifiers; low-power electronics; microwave amplifiers; wideband amplifiers; CMOS low noise amplifier; LNA; RF CMOS process; S2D conversion; active balun; amplifier gain; frequency 0.8 GHz to 10.6 GHz; multistandard application; power consumption; resistive negative feedback stage; single-to-differential conversion; size 0.13 mum; voltage 1.2 V; wideband input impedance matching; Broadband communication; CMOS integrated circuits; Gain; Impedance matching; Power demand; Topology; Wideband;
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2011 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Macau
Print_ISBN :
978-1-4577-1608-9
DOI :
10.1109/PrimeAsia.2011.6075086
