Title :
A chemically-selective microsensor for environmentally-sensitive pollutants realized with an interdigitated gate electrode field-effect transistor (IGEFET)
Author :
Kolesar, Edward S., Jr. ; Wiseman, John M.
Author_Institution :
Air Force Inst. of Technol., Wright-Patterson AFB, Dayton, OH, USA
Abstract :
An IGEFET has been coupled with a chemically active, electron-beam evaporated copper phthalocyanine (CuPc) thin film to realize a gas-sensitive microsensor. The sensor can selectively detect parts-per-billion concentration levels of nitrogen dioxide (NO2 ) and diisopropyl methylphosphonate (DIMP). The sensor is excited with a voltage pulse, and the time- and frequency-domain responses are measured. The envelopes associated with the normalized difference Fourier transform magnitude frequency spectra reveal features which unambiguously distinguish the NO2 and DIMP challenge gas responses. The area beneath each response envelope can correspondingly be interpreted as the sensor´s sensitivity for a specific challenge gas concentration
Keywords :
air pollution detection and control; electric sensing devices; gas sensors; insulated gate field effect transistors; nitrogen compounds; organic compounds; organometallic compounds; NO2; difference Fourier transform magnitude frequency spectra; diisopropyl methylphosphonate; electron-beam evaporated copper phthalocyanine; environmentally-sensitive pollutants; frequency-domain responses; gas-sensitive microsensor; interdigitated gate electrode field-effect transistor; microsensor; sensitivity; thin film; time-domain response; Chemical sensors; Copper; Fourier transforms; Frequency measurement; Gas detectors; Microsensors; Nitrogen; Pulse measurements; Transistors; Voltage;
Conference_Titel :
Aerospace and Electronics Conference, 1991. NAECON 1991., Proceedings of the IEEE 1991 National
Conference_Location :
Dayton, OH
Print_ISBN :
0-7803-0085-8
DOI :
10.1109/NAECON.1991.165723
