Title :
Quantitative analysis of microwave frequency multiplication in MESFET/HEMT devices
Author :
Johnson, J. ; Chee, M. ; Branner, G.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
This paper provides an in-depth analysis of the principles of harmonic frequency generation utilizing microwave MESFET/HEMT transistor models. The technique employs an in-depth computer oriented and quantitative analysis. The effects of bias, drive voltage, and load on the harmonic output of an ideal transistor model are explored
Keywords :
Schottky gate field effect transistors; electronic engineering computing; frequency multipliers; harmonic generation; high electron mobility transistors; microwave field effect transistors; microwave frequency convertors; semiconductor device models; HEMT devices; MESFET devices; bias effects; computer oriented analysis; drive voltage effects; harmonic frequency generation; harmonic output; ideal transistor model; load effects; microwave HEMT models; microwave MESFET models; microwave frequency multiplication; quantitative analysis; Circuit analysis; Electronic mail; Frequency conversion; HEMTs; Harmonic analysis; Intrusion detection; MESFETs; Microwave devices; PHEMTs; Voltage;
Conference_Titel :
Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on
Conference_Location :
Dayton, OH
Print_ISBN :
0-7803-7150-X
DOI :
10.1109/MWSCAS.2001.986298
