Superior ‹110›-directed mobility to ‹100›-directed mobility in ultrathin body (110) nMOSFETs

Author

Shimizu, Ken ; Saraya, Takuya ; Hiramoto, Toshiro

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan

fYear

2009

fDate

5-8 Oct. 2009

Firstpage

1

Lastpage

2

Abstract

The paper demonstrates the mu_e anisotropy in (110) ultra-thin body nFETs for the first time. It is found that lang110rang mu_e is higher than lang100rang mu_e in an ultimately thin SOI nFETs, though lang110rang mu_e is smaller than lang100rang mu_e in bulk or relatively thick silicon-on-insulator (SOI). Result reveals that this is opposite to (110) bulk nFETs, which is important in understanding the physics behind the carrier transport in (110) nFETs and in the selection of the proper channel direction in an ultimately scaled-down device structure.

Keywords

MOSFET; carrier mobility; silicon-on-insulator; (110) ultrathin body nFET; Si; carrier transport; channel direction; lang100rang-directed mobility; mu_e anisotropy; scaled-down device structure; superior lang110rang-directed mobility; thick silicon-on-insulator; ultrathin body (110) nMOSFET; Anisotropic magnetoresistance; Electron mobility; Ellipsoids; FETs; FinFETs; MOSFETs; Physics; Potential well; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2009 IEEE International

Conference_Location

Foster City, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-4256-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2009.5318732

Filename

5318732