• DocumentCode
    2290961
  • Title

    First demonstration of heat dissipation improvement in CMOS technology using Silicon-On-Diamond (SOD) substrates

  • Author

    Mazellier, J.-P. ; Widiez, J. ; Andrieu, F. ; Lions, M. ; Saada, S. ; Hasegawa, M. ; Tsugawa, K. ; Brevard, L. ; Dechamp, J. ; Rabarot, M. ; Delaye, V. ; Cristoloveanu, S. ; Clavelier, L. ; Deleonibus, S. ; Bergonzo, P. ; Faynot, O.

  • Author_Institution
    CEA-LETI, MINATEC, Grenoble, France
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have fabricated Silicon-On-Diamond (SOD) substrates on which, for the first time, we integrated n and p Fully Depleted MOSFETs high-K/metal gate down to 200 nm gate length. The devices show excellent electrical characteristics and a 57% improvement of the thermal resistance compared to the co-processed one on standard SOI.
  • Keywords
    CMOS integrated circuits; MOSFET; elemental semiconductors; silicon; CMOS technology; MOSFET; Si; heat dissipation; silicon-on-diamond substrates; thermal resistance; Bonding; CMOS technology; High K dielectric materials; High-K gate dielectrics; Hydrogen; MOSFETs; Plasma temperature; Silicon on insulator technology; Thermal management; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318735
  • Filename
    5318735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2290961