• DocumentCode
    2290991
  • Title

    SOI gated resistor: CMOS without junctions

  • Author

    Colinge, J.P. ; Lee, C.-W. ; Afzalian, A. ; Dehdashti, N. ; Yan, R. ; Ferain, I. ; Razavi, P. ; O´Neill, B. ; Blake, A. ; White, M. ; Kelleher, A.M. ; McCarthy, B. ; Murphy, R.

  • Author_Institution
    Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.
  • Keywords
    MOSFET; elemental semiconductors; resistors; silicon; silicon-on-insulator; SOI gated resistor; Si-SiO2; junctionless SOI MOSFET; metal-oxide-semiconductor field effect transistor; silicon-on-insulator; Doping; FETs; Fabrication; Implants; MOSFETs; Nanoscale devices; Nanowires; Resistors; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318737
  • Filename
    5318737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2290991