An RF CMOS cascode LNA with current reuse and inductive source degeneration

Author

Fouad, Hafez ; Sharaf, Khaled ; El-Diwany, Essam ; El-Hennawy, Hadia

Author_Institution

Electron. Res. Inst., Cairo, Egypt

Volume

2

fYear

2001

fDate

2001

Firstpage

824

Abstract

An RF CMOS Low-Noise Amplifier (LNA) is proposed using a current reuse technique (CRT) to increase the amplifier transconductance without increasing power dissipation. The circuit was simulated and designed with 0.5 μm CMOS MOSIS process. At 1 GHz, the LNA noise figure (NF) is 2.7 dB, forward gain is 21.6 dB and reverse isolation is -42.5 dB. The LNA consumes 20.3 mW from a 2.2 V power supply

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit design; integrated circuit noise; network analysis; network synthesis; 0.5 micron; 1 GHz; 2.2 V; 2.7 dB; 20.3 mW; 21.6 dB; CMOS MOSIS process; CMOS cascoded LNA; RF CMOS LNA; amplifier transconductance; current reuse technique; inductive source degeneration; low-noise amplifier; monolithic RFIC; power dissipation reduction; CMOS process; Cathode ray tubes; Circuit simulation; Low-noise amplifiers; Noise figure; Noise measurement; Power dissipation; Radio frequency; Radiofrequency amplifiers; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on

Conference_Location

Dayton, OH

Print_ISBN

0-7803-7150-X

Type

conf

DOI

10.1109/MWSCAS.2001.986314

Filename

986314