Title :
Investigation of Ion implantation induced electrically active defects in p-type silicon
Author :
Senawiratne, J. ; Cites, J.S. ; Couillard, J.G. ; Moll, J. ; Williams, C. A Kosik ; Whiting, P.G.
Author_Institution :
Corning Inc., Corning, NY, USA
Abstract :
We investigated ion implantation induced electrically active defects in p-type silicon using deep level transient spectroscopy (DLTS) and photoconductivity spectroscopy at cryogenic temperatures. Implantation related deep traps in H2, B11, and P31 implanted p-type Si and their recovery under isothermal annealing are described. We observed distinct deep trap levels located in the energy range between 0.25 eV up to 0.53 eV away from the valence band edge, which was either suppressed or eliminated upon thermal annealing below 600degC. Supporting the DLTS results, photoconductivity shows strong recovery of a broad absorption band present near the conduction band edge upon thermal annealing. In this paper, we discuss the origin of the broad photoconductivity absorptions and DLTS emission in Si and their relation to the ion implantation induced damage to the lattice structure.
Keywords :
annealing; boron; conduction bands; crystal structure; deep level transient spectroscopy; deep levels; elemental semiconductors; hydrogen; ion implantation; phosphorus; photoconductivity; semiconductor doping; silicon; valence bands; B11 implantation; DLTS emission; P31 implantation; Si:B; Si:H2; Si:P; broad absorption band recovery; conduction band edge; cryogenic temperature spectroscopy; deep level transient spectroscopy; deep traps; electrically active defects; ion implantation; isothermal annealing; lattice structure; p-type silicon; photoconductivity spectroscopy; thermal annealing; valence band edge; Absorption; Annealing; Cryogenics; Ion implantation; Isothermal processes; Photoconductivity; Silicon; Spectroscopy; Temperature; Thermal conductivity;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318742