Title :
Improved modeling for transit time and excess phase delay of advanced bipolar transistors at high current densities
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki, South Korea
Abstract :
Bias-dependent data of the forward transit time and excess phase delay at high current densities are extracted using an accurate measurement technique based on Z-parameter equations. Using these data, simple expressions of these parameters have been developed to improve a RF large-signal bipolar transistor model, and their accuracy is verified by showing good agreements with measured data
Keywords :
bipolar transistors; semiconductor device measurement; semiconductor device models; RF large-signal model; Z-parameter; bipolar transistor; current density; excess phase delay; measurement technique; parameter extraction; transit time; Bipolar transistors; Circuit simulation; Current density; Cutoff frequency; Data mining; Delay effects; Equivalent circuits; Kirk field collapse effect; Radio frequency; SPICE;
Conference_Titel :
Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on
Conference_Location :
Dayton, OH
Print_ISBN :
0-7803-7150-X
DOI :
10.1109/MWSCAS.2001.986319
