DocumentCode
2291106
Title
Improved modeling for transit time and excess phase delay of advanced bipolar transistors at high current densities
Author
Lee, Seonghearn
Author_Institution
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki, South Korea
Volume
2
fYear
2001
fDate
2001
Firstpage
844
Abstract
Bias-dependent data of the forward transit time and excess phase delay at high current densities are extracted using an accurate measurement technique based on Z-parameter equations. Using these data, simple expressions of these parameters have been developed to improve a RF large-signal bipolar transistor model, and their accuracy is verified by showing good agreements with measured data
Keywords
bipolar transistors; semiconductor device measurement; semiconductor device models; RF large-signal model; Z-parameter; bipolar transistor; current density; excess phase delay; measurement technique; parameter extraction; transit time; Bipolar transistors; Circuit simulation; Current density; Cutoff frequency; Data mining; Delay effects; Equivalent circuits; Kirk field collapse effect; Radio frequency; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on
Conference_Location
Dayton, OH
Print_ISBN
0-7803-7150-X
Type
conf
DOI
10.1109/MWSCAS.2001.986319
Filename
986319
Link To Document