Title :
Modeling of electron tunneling in SOI-MOSFET and its influence on device characteristics
Author :
Hayashi, T. ; Sadachika, N. ; Murakami, T. ; Sugiyama, D. ; Yukuta, S. ; Kusu, S. ; Johguchi, K. ; Miyake, M. ; Mattausch, H.J. ; Miura-Mattausch, M. ; Baba, S. ; Ida, J.
Author_Institution :
Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
It is known that the electron tunneling from the valence band (EVB) is enhanced for SOI-MOSFETs with low Vds bias. We have modeled this phenomenon based on the surface-potential description. Our model considers the hole storage, which changes the potential distribution in the substrate. With the developed model it is demonstrated that the EVB effect can be predicted for any measurements accurately. The stored charge results in a 1/f noise enhancement at the same time, which is also well predicted.
Keywords :
1/f noise; MOSFET; semiconductor device models; silicon-on-insulator; tunnelling; valence bands; 1/f noise; SOI-MOSFET; electron tunneling; hole storage; surface-potential description; valence band; Electrons; Tunneling;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318746
