• DocumentCode
    2291187
  • Title

    Modeling of electron tunneling in SOI-MOSFET and its influence on device characteristics

  • Author

    Hayashi, T. ; Sadachika, N. ; Murakami, T. ; Sugiyama, D. ; Yukuta, S. ; Kusu, S. ; Johguchi, K. ; Miyake, M. ; Mattausch, H.J. ; Miura-Mattausch, M. ; Baba, S. ; Ida, J.

  • Author_Institution
    Hiroshima Univ., Higashi-Hiroshima, Japan
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    It is known that the electron tunneling from the valence band (EVB) is enhanced for SOI-MOSFETs with low Vds bias. We have modeled this phenomenon based on the surface-potential description. Our model considers the hole storage, which changes the potential distribution in the substrate. With the developed model it is demonstrated that the EVB effect can be predicted for any measurements accurately. The stored charge results in a 1/f noise enhancement at the same time, which is also well predicted.
  • Keywords
    1/f noise; MOSFET; semiconductor device models; silicon-on-insulator; tunnelling; valence bands; 1/f noise; SOI-MOSFET; electron tunneling; hole storage; surface-potential description; valence band; Electrons; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318746
  • Filename
    5318746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2291187