FD-SOI MOSFETs for the low-voltage nanoscale CMOS era

Limitations and challenges of FD-SOI MOSFETs are investigated in terms of intra- and inter-die V_t-variations, and capabilities of the body-bias control and multi-V_t MOSFETs. State-of-the-art planar FD-SOI MOSFETs are described, citing the SOTB (silicon on thin box) MOSFET as an example. FinFETs are also discussed; their challenges are clarified, and some solutions are proposed, such as high-density FinFETs and capacitors, and a small logic-process compatible DRAM cell. Finally, future prospects for the FD-SOI MOSFETs are presented.