Title :
Radiation effects in MIT Lincoln lab 3DIC technology
Author :
Gouker, P.M. ; Wyatt, P.W. ; Yost, D.-R. ; Chen, C.K. ; Knecht, J.M. ; Chen, C.L. ; Keast, C.L.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
Abstract :
We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX.
Keywords :
field effect transistors; integrated circuit interconnections; radiation effects; MIT Lincoln lab 3DIC technology; n-field effect transistors; nFET; radiation effects; radiation ionization hardening; single tier wafers; Electron traps; FETs; Integrated circuit interconnections; Integrated circuit technology; Ionizing radiation; MOSFETs; Radiation effects; Silicon; Threshold voltage; Wafer bonding;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318752
