DocumentCode
2291318
Title
Three Dimensional integration - memory applications
Author
Iyer, S.S.
Author_Institution
Semicond. R&D Center, IBM Corp., Hopewell Junction, NY, USA
fYear
2009
fDate
5-8 Oct. 2009
Firstpage
1
Lastpage
5
Abstract
3D integration of memory for both memory and processor caches provide a fertile application space for 3D integration. A simple 2 strata stack can reduce individual die size by approximately half, improving chip yield. Multi chip memory stacks can ease packaging and can significantly reduce power for main memory. Such stacks are easily testable and repairable through redundancy. The design of such 3D stacks is critically dependent on the TSV technology used and is expected to become more attractive as TSV diameters and TSV overhead reduce.
Keywords
cache storage; integrated circuit packaging; logic design; storage management chips; 3D integration; TSV technology; memory applications; multichip memory stacks; power reduction; processor caches; strata stack; three dimensional integration; through silicon vias; Integrated circuit interconnections; Laminates; Packaging; Power supplies; Productivity; Prototypes; Random access memory; Silicon; Space technology; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2009 IEEE International
Conference_Location
Foster City, CA
ISSN
1078-621X
Print_ISBN
978-1-4244-4256-0
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2009.5318755
Filename
5318755
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