• DocumentCode
    2291318
  • Title

    Three Dimensional integration - memory applications

  • Author

    Iyer, S.S.

  • Author_Institution
    Semicond. R&D Center, IBM Corp., Hopewell Junction, NY, USA
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    3D integration of memory for both memory and processor caches provide a fertile application space for 3D integration. A simple 2 strata stack can reduce individual die size by approximately half, improving chip yield. Multi chip memory stacks can ease packaging and can significantly reduce power for main memory. Such stacks are easily testable and repairable through redundancy. The design of such 3D stacks is critically dependent on the TSV technology used and is expected to become more attractive as TSV diameters and TSV overhead reduce.
  • Keywords
    cache storage; integrated circuit packaging; logic design; storage management chips; 3D integration; TSV technology; memory applications; multichip memory stacks; power reduction; processor caches; strata stack; three dimensional integration; through silicon vias; Integrated circuit interconnections; Laminates; Packaging; Power supplies; Productivity; Prototypes; Random access memory; Silicon; Space technology; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318755
  • Filename
    5318755