• DocumentCode
    2291368
  • Title

    DC and RF temperature behavior of deep submicron Graded Channel MOSFETs

  • Author

    Emam, M. ; Kumar, A. ; Ida, J. ; Danneville, F. ; Vanhoenacker-Janvier, D. ; Raskin, J.-P.

  • Author_Institution
    Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The superior performance of Graded-Channel MOSFET over classical MOSFET transistors is demonstrated to extend to down scaled channel lengths. While keeping a normal down scaling trend, Graded-Channel devices continue to show favoured static and analog performances in comparison to classical devices. Graded-Channel devices are also characterized in high temperature and high frequency regimes of operation.
  • Keywords
    MOSFET; DC temperature; RF temperature; graded channel MOSFET; graded-channel devices; Cutoff frequency; Degradation; Laboratories; MOS devices; MOSFETs; Radio frequency; Research and development; Temperature dependence; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318757
  • Filename
    5318757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2291368