Title :
DC and RF temperature behavior of deep submicron Graded Channel MOSFETs
Author :
Emam, M. ; Kumar, A. ; Ida, J. ; Danneville, F. ; Vanhoenacker-Janvier, D. ; Raskin, J.-P.
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
The superior performance of Graded-Channel MOSFET over classical MOSFET transistors is demonstrated to extend to down scaled channel lengths. While keeping a normal down scaling trend, Graded-Channel devices continue to show favoured static and analog performances in comparison to classical devices. Graded-Channel devices are also characterized in high temperature and high frequency regimes of operation.
Keywords :
MOSFET; DC temperature; RF temperature; graded channel MOSFET; graded-channel devices; Cutoff frequency; Degradation; Laboratories; MOS devices; MOSFETs; Radio frequency; Research and development; Temperature dependence; Threshold voltage; Transconductance;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318757
