A statistical MOS model for CAD of submicrometer analog IC´s

Author

Crippa, Paolo ; Turchetti, Claudio ; Conti, Massimo

Author_Institution

Dipt. di Elettronica e Autom., Ancona Univ., Italy

Volume

2

fYear

2001

fDate

2001

Firstpage

901

Abstract

A novel statistical model for MOS transistor drain current has been developed that allows us to explore IC architectures and study the effects of technological variations on the system performance without using time-consuming Monte Carlo simulations. Characterizing this model only requires a cheap and simple estimation of the mean value and autocorrelation function of a single stochastic process describing all the process/device variations

Keywords

CMOS analogue integrated circuits; MOSFET; circuit CAD; correlation methods; integrated circuit design; semiconductor device models; statistical analysis; stochastic processes; CAD; CMOS fabrication technologies; IC architectures; MOS transistor drain current; Monte Carlo simulations; analog ICs; autocorrelation function; mean value estimation; process/device variations; statistical MOS model; statistical model; stochastic process; system performance; technological variation effects; Analog integrated circuits; Autocorrelation; CMOS technology; Circuit simulation; Integrated circuit modeling; MOSFETs; Monte Carlo methods; Random variables; Semiconductor device modeling; Stochastic processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on

Conference_Location

Dayton, OH

Print_ISBN

0-7803-7150-X

Type

conf

DOI

10.1109/MWSCAS.2001.986333

Filename

986333