DocumentCode
2291462
Title
SOI design for a high-performance IO interface
Author
Chang, Ken ; Wu, Ting ; Kaviani, Kambiz ; Chun, Jung-Hoon
Author_Institution
Rambus Inc., Los Altos, CA, USA
fYear
2009
fDate
5-8 Oct. 2009
Firstpage
1
Lastpage
4
Abstract
SOI technology is well suited for high speed digital circuits. However, its history effect due to the floating body poses a major challenge to analog circuits. This paper presents the design of a high-performance IO interface (FlexIOtrade) used in Cell Broadband Enginetrade processors , currently in mass production. The design has been scaled across 90 nm, 65 nm, and 45 nm SOI CMOS processes. The parallel interface implemented in 45 nm SOI comprises 5 transmit and 5 receive bytes with each link unidirectionally running at 6.4 Gb/s achieving BER < 10-20. The paper discusses clocking, IO, and ESD aspects of the design in SOI processes.
Keywords
CMOS digital integrated circuits; logic design; microprocessor chips; silicon-on-insulator; BER; SOI design; analog circuits; bit error rate; bit rate 6.4 Gbit/s; cell broadband engine processor; high speed digital circuits; high-performance IO interface; mass production; parallel interface; size 45 nm; size 65 nm; size 90 nm; Application specific integrated circuits; Clocks; Digital circuits; Electrostatic discharge; Frequency; History; Phase locked loops; Thermal conductivity; Transmitters; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2009 IEEE International
Conference_Location
Foster City, CA
ISSN
1078-621X
Print_ISBN
978-1-4244-4256-0
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2009.5318762
Filename
5318762
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