• DocumentCode
    2291462
  • Title

    SOI design for a high-performance IO interface

  • Author

    Chang, Ken ; Wu, Ting ; Kaviani, Kambiz ; Chun, Jung-Hoon

  • Author_Institution
    Rambus Inc., Los Altos, CA, USA
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    SOI technology is well suited for high speed digital circuits. However, its history effect due to the floating body poses a major challenge to analog circuits. This paper presents the design of a high-performance IO interface (FlexIOtrade) used in Cell Broadband Enginetrade processors , currently in mass production. The design has been scaled across 90 nm, 65 nm, and 45 nm SOI CMOS processes. The parallel interface implemented in 45 nm SOI comprises 5 transmit and 5 receive bytes with each link unidirectionally running at 6.4 Gb/s achieving BER < 10-20. The paper discusses clocking, IO, and ESD aspects of the design in SOI processes.
  • Keywords
    CMOS digital integrated circuits; logic design; microprocessor chips; silicon-on-insulator; BER; SOI design; analog circuits; bit error rate; bit rate 6.4 Gbit/s; cell broadband engine processor; high speed digital circuits; high-performance IO interface; mass production; parallel interface; size 45 nm; size 65 nm; size 90 nm; Application specific integrated circuits; Clocks; Digital circuits; Electrostatic discharge; Frequency; History; Phase locked loops; Thermal conductivity; Transmitters; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318762
  • Filename
    5318762