Title :
Variability analysis and FinFET-based design of XOR and XNOR circuit
Author :
Islam, Aminul ; Imran, A. ; Hasan, Mohd
Author_Institution :
Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Abstract :
Due to aggressive scaling and process imperfection in sub-45 nm technology node Vt (threshold voltage) shift is more pronounced causing large variations in circuit response. Therefore, this paper presents the analyses of various popular XOR/XNOR circuits in light of PVT (process, voltage and temperature) variations to verify their functionality and robustness. This paper first investigates output levels of various XOR/XNOR circuits. It further analyses those XOR/XNOR circuits offering better output levels in terms of delay and energy-delay product (EDP). It also performs variability analysis of those parameters to determine robustness of the XOR/XNOR designs. Finally, it implements the best XOR/XNOR circuit in emerging FinFET technology to achieve even better results in terms of propagation delay and EDP. The proposed FinFET-based implementation of XOR/XNOR circuit offers 1.4× improvement in delay and 1.8× improvement in EDP compared to its CMOS counterpart. It proves to be immune against process variation. It proves its robustness by offering 19.3× improvements in delay variability and 10.8× improvements in EDP variability.
Keywords :
MOSFET; logic circuits; CMOS processing; EDP; FinFET-based Design; PVT variation; XOR-XNOR circuit; energy-delay product; process-voltage-temperature variation; size 45 nm; variability analysis; CMOS integrated circuits; Delay; FinFETs; Logic gates; Propagation delay; Variability; drain-induced barrier lowering (DIBL); energy-delay product (EDP); propagation delay; random dopant fluctuation (RDF); short-channel effect (SCE);
Conference_Titel :
Computer and Communication Technology (ICCCT), 2011 2nd International Conference on
Conference_Location :
Allahabad
Print_ISBN :
978-1-4577-1385-9
DOI :
10.1109/ICCCT.2011.6075163